Low‐Voltage Driven High‐Speed and Low‐Energy Memory Operations by Novel TiTe ₂ /Sc _0.3 Sb ₂ Te ₃ Phase‐Change Heterostructure

Phase-change memory (PCM) has long suffered from performance drawbacks such as slow Set speed, high Reset energy, and large multistate drift, severely impeding the developments of high-capacity storage and high-parallel computing chips. It is challenging to simultaneously improve these drawbacks to leading levels, especially when the low-driving-bias criterion must be met for developing PCM chips at advanced technological nodes below ≈16-40 nm. Here, an innovative TiTe₂/Sc_0.3Sb₂Te₃ heterostructure is designed to address this issue. The resulting PCM cells demonstrated the lowest Reset energy (≈6.40 pJ bit^-1), the fastest Set speed (≈4 ns) within the low-voltage (< ≈2.5 V) regime, and the capability to reach sub-ns Set speeds (≈0.6 ns) under higher driving bias, alongside the smallest multilevel resistance drift (≈10^-4-3 × 10^-3), outperforming the relevant monolithic and existing heterostructured cells equipped with even smaller bottom electrodes. In situ electrical-pulse driven microscopic observations unveiled the reversible two-dimensional (2D), phase-transition mechanisms underlying the comprehensively enhanced electrical performances of the TiTe₂/Sc_0.3Sb₂Te₃ heterostructure. The work thus offers valuable guidance for exploring novel chalcogenide heterostructures to achieve more superior PCM performances.