Unveiling the Role of ZnCl<sub>2</sub> in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots

We investigated how ZnCl<sub>2</sub>, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl<sub>2</sub>); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl<sub>2</sub> (Zn-InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn-InAs@ZnSe samples exhibited much lower PL efficiencies (10-20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In-Zn-Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl<sub>2</sub> additive (specifically with ZnCl<sub>2</sub>:InCl<sub>3</sub> precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (-1-1-1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl<sub>2</sub> in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (-1-1-1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl<sub>2</sub> employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl<sub>2</sub> adsorption on the (-1-1-1) facets (i.e., ZnCl<sub>2</sub> acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl<sub>2</sub> as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.

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Journal
ACS Nano
Published
2025-09-25
DOI
https://doi.org/10.1021/acsnano.5c10371
Citations
1
Primary Topic
Quantum Dots Synthesis And Properties
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article
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article

Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots

Mirko Prato, Luca De Trizio, Ivan Infante, Damien Prieur et al.
1 citations
ACS Nano
Quantum Dots Synthesis And Properties
0.52
article

Unveiling the Role of ZnCl2 in Enhancing the Photoluminescence Efficiency of Amino-As-Based InAs@ZnSe Quantum Dots

Mirko Prato, Luca De Trizio, Ivan Infante, Damien Prieur, Liberato Manna, Dongxu Zhu, Aswin Asaithambi, René Bès, Gabriele Saleh, Jordi Llusar, Zheming Liu, Sergio Brovelli, Hiba H. Karakkal, S. Panda
article en
1 citations

Abstract

We investigated how ZnCl<sub>2</sub>, employed as an additive in the amino-As-based synthesis of indium arsenide (InAs) quantum dots (QDs), considerably improves the photoluminescence quantum yield (PLQY) of the resulting InAs@ZnSe core@shell QDs. We achieved this by synthesizing and comparing three distinct InAs QD samples and their corresponding core@shell structures: (1) In(Zn)As QDs (synthesized with ZnCl<sub>2</sub>); (2) standard InAs QDs (std-InAs, made without additives); and (3) std-InAs QDs postsynthesis treated with ZnCl<sub>2</sub> (Zn-InAs). High PLQY values (∼70%) were attained only with In(Zn)As@ZnSe QDs, while std-InAs@ZnSe and Zn-InAs@ZnSe samples exhibited much lower PL efficiencies (10-20%). We also demonstrated that (i) the high PLQY in In(Zn)As@ZnSe QDs could not be attributed solely to the presence of an In-Zn-Se interlayer, as this was present in all three samples; (ii) the specific ZnSe shelling procedure had only a minor impact on the final PLQY; and (iii) the PL efficiency was significantly improved only when high amounts of ZnCl<sub>2</sub> additive (specifically with ZnCl<sub>2</sub>:InCl<sub>3</sub> precursor ratios over 10:1) were used during the InAs QDs synthesis. These findings were rationalized through density functional theory (DFT) calculations coupled with X-ray absorption spectroscopy measurements. DFT models suggested that std-InAs QDs feature surface trap states, mainly located on the (-1-1-1) facets, thus low PL efficiency even after ZnSe shelling. The use of ZnCl<sub>2</sub> in the InAs synthesis led to surface Zn incorporation, particularly on the (100) and (-1-1-1) facets, effectively passivating surface traps and, consequently, yielding highly emissive In(Zn)As@ZnSe QD systems. In contrast, ZnCl<sub>2</sub> employed in the postsynthesis treatment of std-InAs QDs resulted only in a limited surface Zn incorporation and in ZnCl<sub>2</sub> adsorption on the (-1-1-1) facets (i.e., ZnCl<sub>2</sub> acting as a Z-type ligand), leading to poor passivation of surface traps. Overall, our study demonstrates the critical role of ZnCl<sub>2</sub> as a synthesis additive in delivering highly emissive amino-As-based InAs@ZnSe QDs.

ACS NanoVol. 19(39)
Ikerbasque (ES), University of Helsinki (FI), Basque Center for Materials, Applications and Nanostructures (ES), European Synchrotron Radiation Facility (FR), Italian Institute of Technology (IT), Culture Resource (EG), Industriale Chimica (Italy) (IT), University of Milano-Bicocca (IT), University of Genoa (IT)
Openalex Percentile: Top 33%
Quantum Dots Synthesis And Properties
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