Progress on hafnium oxide-based emerging ferroelectric materials and applications

Since the discovery of ferroelectricity in Si-doped HfO2 in 2011, HfO2-based materials have attracted extensive interest from researchers. Their various advantages provide a broad research prospect in the field of ferroelectric materials and devices. Researchers have conducted effective studies on the origin of ferroelectricity, the wake-up effect, the fatigue effect, and the potential for device applications. These studies contribute to a better understanding of the properties and applications of HfO2-based materials. This article provides a comprehensive review of the origin and influencing factors of ferroelectricity in HfO2, advantages in material applications, and limitations in applications from multiple perspectives. It also introduces the currently mature methods for preparing HfO2-based ferroelectric materials and cutting-edge applications in different device fields. Finally, the future development prospects of HfO2-based materials are also discussed.