Manipulating Individual Topological Solitons and Bisolitons in an Electronic System

While localized topological modes in quantum materials, such as topological solitons and Majorana fermions, promise loss-less delivery of classical and quantum information, manipulating individual topological modes has been highly challenging. The manipulation of Z<sub>4</sub> topological solitons is reported in a 1D charge density wave (CDW) insulator of indium atomic wires on a silicon surface. Using the current injection from a scanning tunneling microscopy tip, individual defects-pinned solitons can be created, translated, and annihilated. Moreover, this method is applied to induce bi-soliton processes such as transforming a soliton into a different soliton, fissioning one into two solitons, and fusing and dissociating two solitons, where soliton topological charges are manipulated. The theoretical calculations attribute the mechanism of manipulation to local destabilization of the CDW structure by hole doping. This work demonstrates addressable control over most of the possible operations between individual and paired Z<sub>4</sub> solitons and secures a way to investigating dynamics of quantum solitons and to processing topologically-protected multi-valued information in electronic systems.

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Publication Details

Journal
Advanced Materials
Published
2025-09-25
DOI
https://doi.org/10.1002/adma.202510318
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
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article

Manipulating Individual Topological Solitons and Bisolitons in an Electronic System

Jae Whan Park, Han Woong Yeom, Taehwan Im
Advanced Materials
Topological Materials and Phenomena
article

Manipulating Individual Topological Solitons and Bisolitons in an Electronic System

Jae Whan Park, Han Woong Yeom, Taehwan Im
article en

Abstract

While localized topological modes in quantum materials, such as topological solitons and Majorana fermions, promise loss-less delivery of classical and quantum information, manipulating individual topological modes has been highly challenging. The manipulation of Z<sub>4</sub> topological solitons is reported in a 1D charge density wave (CDW) insulator of indium atomic wires on a silicon surface. Using the current injection from a scanning tunneling microscopy tip, individual defects-pinned solitons can be created, translated, and annihilated. Moreover, this method is applied to induce bi-soliton processes such as transforming a soliton into a different soliton, fissioning one into two solitons, and fusing and dissociating two solitons, where soliton topological charges are manipulated. The theoretical calculations attribute the mechanism of manipulation to local destabilization of the CDW structure by hole doping. This work demonstrates addressable control over most of the possible operations between individual and paired Z<sub>4</sub> solitons and secures a way to investigating dynamics of quantum solitons and to processing topologically-protected multi-valued information in electronic systems.

Advanced MaterialsVol. 38(3)
Pohang University of Science and Technology (KR), Institute for Basic Science (KR)
Openalex Percentile: Top 79%
Topological Materials and Phenomena
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Manipulating Individual Topological Solitons and Bisolitons in an Electronic System — Jae Whan Park, Han Woong Yeom, et al. · Advanced Materials (2025) | TGRS Research Map | TGRS