Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy
In this study the emission homogeneity of InGaAs multiple quantum wells (MQW) was investigated. Two sets of samples grown by molecular beam epitaxy, with varying In content and QW thickness as well as barrier thickness, were mapped using room temperature photoluminescence and micro-photoluminescence. The result showed that increasing In content leads to a higher stress accumulation which can lead to the formation of a denser net of lattice mismatch dislocations in the QW layer. Samples with optimized barrier design exhibit uniform emission intensity.
Authors
- Bronislovas Čechavičius (ORCID: https://orcid.org/0000-0002-7119-7213)
- Renata Butkutė (ORCID: https://orcid.org/0000-0002-1682-056X)
- Sandra Stanionytė (ORCID: https://orcid.org/0000-0003-0018-5036)
- Martynas Talaikis (ORCID: https://orcid.org/0000-0003-3516-6425)
- Aurimas Čerškus (ORCID: https://orcid.org/0000-0001-8439-5115)
- Virginijus Bukauskas (ORCID: https://orcid.org/0000-0003-0275-9603)
- A. Vaitkevičius (ORCID: https://orcid.org/0000-0003-3625-198X)
- Evelina Dudutienė (ORCID: https://orcid.org/0000-0003-1097-8531)
- Andrea Zelioli (ORCID: https://orcid.org/0000-0001-6829-3549)
- P. Wojnar (ORCID: https://orcid.org/0000-0001-6067-1875)
- Aivaras Špokas (ORCID: https://orcid.org/0009-0009-9289-0285)
- Vitaly Deibuk
Institutions
- Yuriy Fedkovych Chernivtsi National University (UA)
- Vilnius University (LT)
- Center for Physical Sciences and Technology (LT)
- Polish Academy of Sciences (PL)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-09-25
- DOI
- https://doi.org/10.1038/s41598-025-17326-1
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Lietuvos Mokslo Taryba