Modeling of FINFET using FEM to Get High Rectification Efficiency and Analytical Verification Through MATLAB

A prospective substitute for conventional planar MOSFETs, the Fin Field-Effect Transistor (FinFET) offers better electrostatic control and scalability. FinFET architectures are optimized in this work to achieve high rectification efficiency, which is necessary for their application in low-power and high-frequency rectifier circuits. The electrostatic behavior and current transport mechanisms inside the FinFET are precisely modelled using a simulation framework based on the Finite Element Method (FEM) under various structural and material parameters, such as fin height, fin width, gate oxide thickness, channel doping, and gate work function. To determine the setup that produces the highest rectification efficiency, an optimization method and parametric sweep are used. The FEM simulation results are further examined and confirmed using MATLAB, which evaluates device characteristics including threshold voltage, rectification ratio, and I-V behavior. In order to create FinFETs for rectifiers in RF and power electronics, the study illustrates how careful design and optimizing using FEM significantly improve rectification efficiency.