Radiated Immunity (ISO 11452-2) Failure Debugging of a High-Side Driver using EMI Modeling

ISO 11452-2 specifies an absorber-lined shielded enclosure method for testing the radiated immunity (RI) of a device under test (DUT), where the DUT and harness are subjected to the electromagnetic disturbance generated inside the enclosure. In the debugging of the RI failure of a High-Side Driver IC device, EMI simulation is used to predict the IC pin voltage (voltage vs. frequency) and correlated with the lab measurement failure result. This modeling approach optimizes the PCB layout and components design to mitigate the RI failure. As such, enhanced predictive RI modeling can be performed early in the design phase to reduce the PCB design iterations, save time to market, and avoid additional testing costs.