Analysis and Design of a Resistor-Less DC-Bus Active Discharge and Dynamic Braking Scheme Using IGBTs in the Active Region

During shutdowns, emergency conditions, and dynamic braking, fully discharging the dc-bus capacitor or clamping the dc-bus voltage in industrial systems is typically managed using power resistors and additional switches. This conventional approach increases system cost, size, and complexity. This paper introduces a compact, cost-effective, resistor-less method for two functions: (a) active discharge and (b) dynamic braking in low-power industrial systems. The proposed technique operates IGBTs in their active region with low gate-emitter voltages (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>GE</sub></i>), creating high impedance in the discharge path to limit current. For active discharge, a constant-power strategy is implemented using pulse frequency modulation (PFM), where the on-time (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t<sub>on</sub></i>) of each pulse is fixed and the pulse frequency is ramped up to accelerate energy dissipation. This approach enables complete discharge of a 600 V dc-bus within 1 second, handled entirely by a single IGBT. The method is validated across three different IGBT vendors, showing consistent results and long-term reliability with no parameter degradation after over 200,000 completed discharge cycles. For dynamic braking, the PFM method with fixed pulse frequency enables continuous power dissipation between 50 W and 150 W for over 30 minutes. It effectively replaces conventional internal braking resistors typically rated from 20 W to 200 W with resistance values of 5-120 Ω. The system can also tolerate brief overloads up to 50% beyond IGBT current ratings for 10-20 seconds, providing sufficient time to complete braking without failure, as confirmed by test results. All these benefits are achieved through a simple gate driver modification that supplies partial <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>GE</sub></i> levels (3-10 V), eliminating bulky resistors, reducing cost by at least 50%, and saving space-making the solution ideal for high-volume industrial applications.

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Publication Details

Journal
IEEE Journal of Emerging and Selected Topics in Power Electronics
Published
2025-01-01
DOI
https://doi.org/10.1109/jestpe.2025.3614133
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Analysis and Design of a Resistor-Less DC-Bus Active Discharge and Dynamic Braking Scheme Using IGBTs in the Active Region

A. Deshmukh, Bilal Akin, Ahmet M. Hava, Mustafa Murat Sezer
IEEE Journal of Emerging and Selected Topics in Power Electronics
Silicon Carbide Semiconductor Technologies
article

Analysis and Design of a Resistor-Less DC-Bus Active Discharge and Dynamic Braking Scheme Using IGBTs in the Active Region

A. Deshmukh, Bilal Akin, Ahmet M. Hava, Mustafa Murat Sezer
article en

Abstract

During shutdowns, emergency conditions, and dynamic braking, fully discharging the dc-bus capacitor or clamping the dc-bus voltage in industrial systems is typically managed using power resistors and additional switches. This conventional approach increases system cost, size, and complexity. This paper introduces a compact, cost-effective, resistor-less method for two functions: (a) active discharge and (b) dynamic braking in low-power industrial systems. The proposed technique operates IGBTs in their active region with low gate-emitter voltages (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>GE</sub></i>), creating high impedance in the discharge path to limit current. For active discharge, a constant-power strategy is implemented using pulse frequency modulation (PFM), where the on-time (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t<sub>on</sub></i>) of each pulse is fixed and the pulse frequency is ramped up to accelerate energy dissipation. This approach enables complete discharge of a 600 V dc-bus within 1 second, handled entirely by a single IGBT. The method is validated across three different IGBT vendors, showing consistent results and long-term reliability with no parameter degradation after over 200,000 completed discharge cycles. For dynamic braking, the PFM method with fixed pulse frequency enables continuous power dissipation between 50 W and 150 W for over 30 minutes. It effectively replaces conventional internal braking resistors typically rated from 20 W to 200 W with resistance values of 5-120 Ω. The system can also tolerate brief overloads up to 50% beyond IGBT current ratings for 10-20 seconds, providing sufficient time to complete braking without failure, as confirmed by test results. All these benefits are achieved through a simple gate driver modification that supplies partial <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>GE</sub></i> levels (3-10 V), eliminating bulky resistors, reducing cost by at least 50%, and saving space-making the solution ideal for high-volume industrial applications.

IEEE Journal of Emerging and Selected Topics in Power Electronics
Openalex Percentile: Top 74%
Silicon Carbide Semiconductor Technologies
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