Multifunctional Reconfigurable Schottky Barrier Device Enabled by Local Out‐of‐Plane Ferroelectric Doping

Abstract To address the rapid growth of artificial intelligence applications, emerging computing architectures require low‐power, structurally simple, and multifunctional memory devices. Although 2D devices provide promising solutions, a trade‐off between multifunctionality and structural simplicity remains a significant challenge. This work introduces an approach for Schottky barrier modulation leveraging the out‐of‐plane (OOP) ferroelectricity of α‐In 2 Se 3 . Utilizing a dual‐electrode design, the WSe 2 /α‐In 2 Se 3 device seamlessly integrates rectification, multi‐level memory, synaptic behavior, and photovoltaic effects into a single platform. Through OOP ferroelectric modulation of α‐In 2 Se 3 , the device exhibits excellent reconfigurable rectification with a maximum rectification ratio of 55.4 and supports 28 storage states, with a retention time exceeding 3,000 s. Additionally, it is shows dynamic synaptic plasticity, featuring paired‐pulse facilitation (PPF), long‐term potentiation (LTP), and long‐term depression (LTD). With 118 distinct multi‐level current states and strong linearity in LTP and LTD, it achieves 88.2% recognition accuracy on the Fashion Modified National Institute of Standard and Technology dataset. The device demonstrates reconfigurable photovoltaic effects and photodetection capability. These results highlight the potential of Schottky barrier modulation enabled by local ferroelectric doping in advancing future computing systems and sensing networks.