Low-Cost CMOS Tech for Inclusive High-Energy Physics Education
We present a comprehensive characterization of commercial CMOS sensors using complementary measurement techniques. We focus on obtaining the Photon Transfer Curve, Dark Current, and Read Noise as key performance parameters. The Photon Transfer Curve was derived to evaluate the sensor’s dynamic range and linearity. This was accomplished using two different methods:the conventional approach, based on homogeneous images, and a novel complementary method, which relies on repeated samples of the same inhomogeneous image. Additionally, we studied the temperature dependence of dark current, taking into account the effect of an infrared filter, and the readout noise was determined as low as 2 electron per pixel. This work establishes the technical foundation for characterizing and operating CMOS sensors, serving as a starting point for a series of undergraduate experiments. Nevertheless, it also offers valuable insights into the operational limits and potential scientific applications of commercial CMOS sensors.
Authors
- Darío Rodrigues (ORCID: https://orcid.org/0000-0002-7952-7168)
- Ana Martina Botti (ORCID: https://orcid.org/0000-0001-6396-2467)
- Javier Tiffenberg (ORCID: https://orcid.org/0000-0002-1126-2941)
- Eliana Depaoli (ORCID: https://orcid.org/0000-0003-3426-7523)
- C. Bonifazi (ORCID: https://orcid.org/0000-0002-3087-3609)
- Francesco Paolo Cammarata (ORCID: https://orcid.org/0000-0002-0554-6649)
- G. E. R. Schulze
- Lara Barreiro
- Sabrina Benas
- Mora Danussi
- Pilar López Maggi
- Julieta Pérez Lanzillotta
Publication Details
- Published
- 2025-09-25
- DOI
- https://doi.org/10.22323/1.501.1239
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00