Low-Cost CMOS Tech for Inclusive High-Energy Physics Education

We present a comprehensive characterization of commercial CMOS sensors using complementary measurement techniques. We focus on obtaining the Photon Transfer Curve, Dark Current, and Read Noise as key performance parameters. The Photon Transfer Curve was derived to evaluate the sensor’s dynamic range and linearity. This was accomplished using two different methods:the conventional approach, based on homogeneous images, and a novel complementary method, which relies on repeated samples of the same inhomogeneous image. Additionally, we studied the temperature dependence of dark current, taking into account the effect of an infrared filter, and the readout noise was determined as low as 2 electron per pixel. This work establishes the technical foundation for characterizing and operating CMOS sensors, serving as a starting point for a series of undergraduate experiments. Nevertheless, it also offers valuable insights into the operational limits and potential scientific applications of commercial CMOS sensors.

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Publication Details

Published
2025-09-25
DOI
https://doi.org/10.22323/1.501.1239
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Low-Cost CMOS Tech for Inclusive High-Energy Physics Education

Darío Rodrigues, Ana Martina Botti, Javier Tiffenberg, Eliana Depaoli et al.
Advancements in Semiconductor Devices and Circuit Design
article

Low-Cost CMOS Tech for Inclusive High-Energy Physics Education

Darío Rodrigues, Ana Martina Botti, Javier Tiffenberg, Eliana Depaoli, C. Bonifazi, Francesco Paolo Cammarata, G. E. R. Schulze, Lara Barreiro, Sabrina Benas, Mora Danussi, Pilar López Maggi, Julieta Pérez Lanzillotta
article en

Abstract

We present a comprehensive characterization of commercial CMOS sensors using complementary measurement techniques. We focus on obtaining the Photon Transfer Curve, Dark Current, and Read Noise as key performance parameters. The Photon Transfer Curve was derived to evaluate the sensor’s dynamic range and linearity. This was accomplished using two different methods:the conventional approach, based on homogeneous images, and a novel complementary method, which relies on repeated samples of the same inhomogeneous image. Additionally, we studied the temperature dependence of dark current, taking into account the effect of an infrared filter, and the readout noise was determined as low as 2 electron per pixel. This work establishes the technical foundation for characterizing and operating CMOS sensors, serving as a starting point for a series of undergraduate experiments. Nevertheless, it also offers valuable insights into the operational limits and potential scientific applications of commercial CMOS sensors.

Openalex Percentile: Top 74%
Advancements in Semiconductor Devices and Circuit Design
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