The leakage current suppression mechanism in a RuO <sub>2</sub> /SrTiO <sub>3</sub> /Ru capacitor induced by introduction of an ultra-thin GeO <sub>2</sub> interfacial layer at the bottom interface
An ultrathin GeO 2 layer effectively passivates the STO/Ru BE interface and compensates oxygen vacancies within the STO layer, thereby significantly suppressing leakage current in an MIM capacitor.
Authors
- Junil Lim
- Dohyun Kim (ORCID: https://orcid.org/0009-0002-7347-7398)
- Haewon Song (ORCID: https://orcid.org/0000-0002-3524-1379)
- Heewon Paik (ORCID: https://orcid.org/0000-0002-6351-9745)
- Cheol Seong Hwang (ORCID: https://orcid.org/0000-0002-6254-9758)
- Han-Sub Yoon
- Haengha Seo
- Jonghoon Shin (ORCID: https://orcid.org/0000-0003-1721-1253)
- Dae Seon Kwon (ORCID: https://orcid.org/0000-0002-0025-9042)
- Tae Kyun Kim (ORCID: https://orcid.org/0000-0001-6345-4227)
- Dong Gun Kim (ORCID: https://orcid.org/0000-0002-6465-0649)
- Jung‐Hae Choi
Institutions
- Seoul National University (KR)
- Sookmyung Women's University (KR)
- Korea Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02736e
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00