SiNx RRAMs performance with different stoichiometries

• The ratio x = [N]/[Si] of SiN x thin films was modified by adjusting the gas flow rates of dichlorosilane and NH 3 during LPCVD. • Stoichiometic, Si-rich and N-rich SiN x were fabricated for RRAMs. • Electrical characterization measurements revealed current self-compliance characteristics during RESET for stoichiometric and N-rich, as well as faster SET times for N-rich. • The MSCLC conduction mechanism is dominant during SET. • A linear dependance between the logarithmic time to breakdown and 1/V Stress was found during constant voltage stress. The microstructure of SiN x is strongly affected by its stoichiometry, x. The stoichiometry of SiN x thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of the resulting MIS RRAM devices. DC electrical characterization, impedance spectroscopy and constant voltage stress measurements were carried out to investigate the properties of non-stoichiometric silicon nitride films as resistive switching material. The average SET time for each device was measured by applying voltage ramps. Improvement in the SET/RESET voltages and SET time is observed. Finally, the stoichiometric film exhibits the lowest breakdown acceleration factor, while the Si-rich film the highest