Development of a Low-Particle Emission Linear Atmospheric Plasma Device for Hydrophilization of Silicon Wafers

We developed a low-particle emission linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.

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Publication Details

Journal
Applied Sciences
Published
2025-09-24
DOI
https://doi.org/10.3390/app151910349
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Development of a Low-Particle Emission Linear Atmospheric Plasma Device for Hydrophilization of Silicon Wafers

Junnosuke Furuya, Nobuhiko Nishiyama, Akitoshi Okino, Taiki Osawa et al.
Applied Sciences
Thin-Film Transistor Technologies
article

Development of a Low-Particle Emission Linear Atmospheric Plasma Device for Hydrophilization of Silicon Wafers

Junnosuke Furuya, Nobuhiko Nishiyama, Akitoshi Okino, Taiki Osawa, Sho Yoshida, Koki Hihara, Akane Yaida
article en

Abstract

We developed a low-particle emission linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.

Applied SciencesVol. 15(19)
Tokyo Institute of Technology (JP), Innovative Research (United States) (US)
Japan Society for the Promotion of Science
Openalex Percentile: Top 74%
Thin-Film Transistor Technologies
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