Development of a Low-Particle Emission Linear Atmospheric Plasma Device for Hydrophilization of Silicon Wafers
We developed a low-particle emission linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.
Authors
- Junnosuke Furuya
- Nobuhiko Nishiyama (ORCID: https://orcid.org/0000-0001-8288-6690)
- Akitoshi Okino (ORCID: https://orcid.org/0000-0002-8949-294X)
- Taiki Osawa
- Sho Yoshida
- Koki Hihara
- Akane Yaida
Institutions
- Tokyo Institute of Technology (JP)
- Innovative Research (United States) (US)
Publication Details
- Journal
- Applied Sciences
- Published
- 2025-09-24
- DOI
- https://doi.org/10.3390/app151910349
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Society for the Promotion of Science