GaN/InN HEMT-Based UV Photodetector on SiC with Hexagonal Boron Nitride Passivation

This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. This study is conducted as a fully numerical simulation using the Silvaco Atlas platform, providing detailed electrothermal and optoelectronic analysis of the proposed device. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. In the device architecture, the metal contacts consist of a 2 nm Nickel (Ni) adhesion layer followed by Gold (Au), employed as source and drain electrodes, while a recessed gate embedded within the substrate ensures improved electric field control and effective noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from the typical literature values of the order of 10−8 A to approximately 10−10 A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a SiC substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360 nm ultraviolet (UV) illumination, a high photo-to-dark current ratio (PDCR) found at approximately 106, and tunable performance via structural optimization of p-GaN width between 0.40 μm and 1.60 μm, doping concentration from 5×1016 cm−3 to 5×1018 cm−3, and embedding depth between 0.060 μm and 0.068 μm. The results underscore the proposed structure’s notable effectiveness in passivation quality, suppression of gate leakage, and thermal management, collectively establishing it as a robust and reliable platform for next-generation UV photodetectors operating under harsh environmental conditions.