Effects of magnetic and electric fields on optical characteristics in doped Anharmonic GaAs quantum wells

• We study the optical absorption coefficients in doped Anharmonic GaAs quantum wells. • The optical absorption coefficients depend on the doping layer concentration and its location as well as the electric and magnetic fields • The self-consistent resolution is employed to compute the energy levels and wavefunctions and optical absorptions. In this work, we investigate the energy structure of confined electrons in a doped structure based on an octic anharmonic confining potential. We conduct numerical analysis within the parabolic and effective mass approximations using the compact density matrix theory while taking into consideration the effects of external fields. First, we compute and analyze the lowest energy levels along with their corresponding probability distributions. This electronic analysis is performed through a self-consistent resolution of three coupled equations: the Schrödinger, neutrality, and Poisson equations. To compute the total optical absorption coefficients (TOACs), we evaluate the key factors influencing optical transitions, including dipole matrix elements, energy separations, and the occupancy ratio. A comprehensive discussion is provided on the impact of doping concentration and external fields on TOACs shifts. The results reveal that adjusting the doping concentration is the most effective strategy for inducing significant changes in energy levels, surpassing the effects of electric and magnetic fields. Moreover, this approach enables both red and blue shifts in the TOACs, making it highly advantageous for technological applications.