Thermoelectric performance of bulklike MoS2 thin films: Fabrication, characterization, and Seebeck coefficient analysis

Molybdenum disulfide (MoS2) is of particular interest for thermoelectric devices due to its inherently low lattice thermal conductivity, tunable electronic properties, and ability to sustain a high Seebeck coefficient. This study investigates the thermoelectric potential of bulklike MoS2 thin films with a thickness of ∼7 nm, fabricated via the sulfurization of MoO3. The thickness was confirmed through atomic force microscopy and Raman spectroscopy, with a wavenumber shift (Δω) of 25.1 cm−1, consistent with bulklike MoS2 characteristics. Meanwhile, the Raman mapping results reveal that the MoS2 thin film exhibits flat morphology and uniform thickness, ensuring the accuracy and reliability of the Seebeck coefficient measurements. The Seebeck coefficient of MoS2 was measured as 643 μV/K and analyzed using the 2ω method. The results demonstrate the reliability of the data and highlight the potential of MoS2 thin films for efficient thermoelectric energy conversion. This work underscores the viability of bulklike 2D materials in developing next-generation energy-efficient devices.