Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm2
In this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance. We investigate the electric field distribution within the reduced surface field (RESURF) structure under reverse-biased conditions, as well as forward transfer and output characteristics using TCAD simulation. The proposed LPR-FinFET demonstrates a high breakdown voltage of 247 V and a low specific on-resistance of 0.255 mΩ·cm<sup>2</sup> with a high-power figure of merit of 239.3 MW/cm<sup>2</sup>. The superior characteristics of our proposed LPR-FinFET show the potential for applications as a lateral power semiconductor using silicon-on-insulator (SOI) technology.
Authors
- Taeeun Lee
- Chang Woo Song (ORCID: https://orcid.org/0000-0002-3596-3291)
- Sinsu Kyoung (ORCID: https://orcid.org/0000-0003-1350-9183)
- Sola Woo (ORCID: https://orcid.org/0000-0002-1386-4479)
- Dongyeon Kim (ORCID: https://orcid.org/0000-0002-1958-7425)
Institutions
- Korea Electric Power Corporation (South Korea) (KR)
- Pukyong National University (KR)
Publication Details
- Journal
- Micromachines
- Published
- 2025-09-24
- DOI
- https://doi.org/10.3390/mi16101080
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation
- Ministry of Trade, Industry and Energy
- IC Design Education Center
- Busan Metropolitan City