Halide Perovskite Quantum Dots Form a Scalable Unified Platform for Resistive Memories, Crossbar Networks, Neuromorphic Synapses, and Field Effect Transistors

Abstract The emergence of real‐time edge computing, artificial intelligence inference, and the continuous expansion of connected devices highlight the energy and latency constraints inherent in von Neumann circuits. Solution‐processed halide perovskite quantum dots (QD) present a cost‐effective option due to their flexible ABX 3 lattice, which allows collaborative electronic and ionic movement. This review initially examines the chemical principles, defect chemistry, and scalable methods such as hot injection or ligand‐assisted precipitation that enhance phase purity and stability. The latest advancements in QD resistive memories, high‐density crossbar matrices, neuromorphic synaptic elements, and perovskite‐enabled field‐effect transistors (FETs) are subsequently examined, emphasizing low‐voltage operation, multilevel storage, and light‐programmable conductance. The combination of transport mechanisms within the dots results in a significant ON/OFF ratio, prolonged retention capabilities, and gradual weight adjustments. The process of ionic drift also supports artificial synapses that emulate both short‐term and long‐term plasticity. Furthermore, integrating a switching layer with an organic channel results in programmable transistors that combine sensing, storage, and logic capabilities on flexible substrates. Halide perovskite QDs offer a flexible basis for the development of future low‐power electronic materials and universal memory systems, facilitating widespread edge intelligence across both mobile and centered platforms.