Encapsulating Laser‐Induced Graphene to Preserve its Electrical Properties and Enhance its Mechanical Robustness

Laser‐induced graphene (LIG) has gained significant attention as a promising material for various applications, including flexible electronics, due to its high electrical conductivity, ease of fabrication, and cost‐effective production. However, its fragile structure makes it susceptible to degradation under mechanical stress and harsh environments. Existing encapsulation techniques compromise LIG's conductivity, limiting its practical applications. Herein, an encapsulation method that enhances the mechanical durability while preserving its electrical properties is introduced. The LIG exhibits an initial sheet resistance of 2.2 Ω sq −1 , which is among the lowest values ever achieved. Using a pressure of 80 psi, LIG is encapsulated with a polyimide layer, resulting in a minimal resistance increase of only 5%. Comprehensive characterization, including Raman spectroscopy and scanning electron microscopy, confirms that the encapsulation approach maintains the structural integrity of LIG while significantly improving its resilience to bending and environmental factors such as moisture and temperature fluctuations. Additionally, initial cyclic loading tests demonstrate the encapsulated LIG's ability to retain most of its conductive properties after the first mechanical deformation. These findings highlight the potential of this encapsulation technique for advancing flexible and wearable electronic devices, paving the way for more durable, high‐conductivity graphene‐based technologies.