Highly integrated GeTe thin-film thermoelectric devices for extreme environments
By incorporating a spectrally selective absorber with self-cleaning properties into TE thin-film devices, the device demonstrates a high open-circuit voltage density of ∼10.4 mV cm −2 and an output power density of ∼2.5 mW cm −2 .
Authors
- Jun Mao (ORCID: https://orcid.org/0000-0001-5275-8954)
- Shouhao Zhang (ORCID: https://orcid.org/0009-0004-1003-9109)
- Feng Cao (ORCID: https://orcid.org/0000-0003-3140-4502)
- Xingjun Liu (ORCID: https://orcid.org/0000-0002-3015-8525)
- Zunqian Tang
- Jian Wang (ORCID: https://orcid.org/0000-0001-5184-7023)
- Qian Zhang (ORCID: https://orcid.org/0000-0003-2523-1553)
- Xiaoyu Sun (ORCID: https://orcid.org/0000-0002-7018-9545)
- Zirui Zhao
- Chong Wang (ORCID: https://orcid.org/0009-0007-4414-5147)
Institutions
- Shenzhen University (CN)
- Harbin Welding Institute (CN)
- Ministry of Industry and Information Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta05595d
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00