Prediction of ABX Compounds (X = As, Sn, Sb, Pb, or Bi) with the MgAgAs Structure Type and Their Crystal Lattice Parameters

Using machine learning programs, the prediction of 250 not yet obtained compounds of composition ABX (where A and B are different chemical elements, and X are As, Sn, Sb, Pb or Bi) with a crystal structure of the MgAgAs type was carried out and the values of their crystal lattice parameter were estimated. Using the cross-validation method, the best machine learning algorithms were selected for subsequent predicting. When making predicts about compounds that have not yet been synthesized, the most accurate programs were based on neural network training algorithms, support vector machines and k-nearest neighbors, for which the accuracy was determined to be 88.5, 91.0, and 88.4%, respectively. When predicting the value of the crystal lattice parameter of the predicted compounds, the best results were obtained using programs based on the Bayesian Ridge methods (coefficient of determination R2 = 0.959, mean absolute error MAE = 0.0370, mean square error MSE = 0.0030), ARD Regression (R2 = 0.950, MAE = 0.0401, MSE = 0.0036) and Ridge (R2 = 0.959, MAE = 0.0368, MSE = 0.0029), i.e., the deviation of the calculated values from the experimental ones was in the range of 0.0368 to 0.0401 A. When predicting new compounds and estimating their crystal lattice parameters, only the values of the properties of the chemical elements included in their composition were used.

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Publication Details

Journal
Inorganic Materials Applied Research
Published
2025-09-24
DOI
https://doi.org/10.1134/s2075113325701308
Primary Topic
Semiconductor materials and interfaces
Type
article
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article

Prediction of ABX Compounds (X = As, Sn, Sb, Pb, or Bi) with the MgAgAs Structure Type and Their Crystal Lattice Parameters

A. V. Stolyarenko, O. V. Sen’ko, V. A. Dudarev, A. A. Dokukin et al.
Inorganic Materials Applied Research
Semiconductor materials and interfaces
article

Prediction of ABX Compounds (X = As, Sn, Sb, Pb, or Bi) with the MgAgAs Structure Type and Their Crystal Lattice Parameters

A. V. Stolyarenko, O. V. Sen’ko, V. A. Dudarev, A. A. Dokukin, Yu. O. Kuznetsova, N. N. Kiseleva
article en

Abstract

Using machine learning programs, the prediction of 250 not yet obtained compounds of composition ABX (where A and B are different chemical elements, and X are As, Sn, Sb, Pb or Bi) with a crystal structure of the MgAgAs type was carried out and the values of their crystal lattice parameter were estimated. Using the cross-validation method, the best machine learning algorithms were selected for subsequent predicting. When making predicts about compounds that have not yet been synthesized, the most accurate programs were based on neural network training algorithms, support vector machines and k-nearest neighbors, for which the accuracy was determined to be 88.5, 91.0, and 88.4%, respectively. When predicting the value of the crystal lattice parameter of the predicted compounds, the best results were obtained using programs based on the Bayesian Ridge methods (coefficient of determination R2 = 0.959, mean absolute error MAE = 0.0370, mean square error MSE = 0.0030), ARD Regression (R2 = 0.950, MAE = 0.0401, MSE = 0.0036) and Ridge (R2 = 0.959, MAE = 0.0368, MSE = 0.0029), i.e., the deviation of the calculated values from the experimental ones was in the range of 0.0368 to 0.0401 A. When predicting new compounds and estimating their crystal lattice parameters, only the values of the properties of the chemical elements included in their composition were used.

Inorganic Materials Applied ResearchVol. 16(5)
Baikov Institute of Metallurgy and Materials Science (RU), Ruhr University Bochum (DE)
Openalex Percentile: Top 79%
Semiconductor materials and interfaces
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Prediction of ABX Compounds (X = As, Sn, Sb, Pb, or Bi) with the MgAgAs Structure Type and Their Crystal Lattice Parameters — A. V. Stolyarenko, O. V. Sen’ko, et al. · Inorganic Materials Applied Research (2025) | TGRS Research Map | TGRS