Performance Analysis of Voltage Second Generation Current Conveyor

Analog signal processing systems heavily depend on voltage second-generation current conveyors (VCII). The designed study explores VCII analysis followed by power and voltage improvements for ultra-low operational specifications. The proposed design applies bulk-driven MOSFETs operated in the subthreshold region as part of a mixed CMOS and FinFET technology infrastructure. The circuit design achieves wide voltage and current input capabilities in combination with low power requirements through this approach. The three technological frameworks, 180nm, 90nm CMOS, and 18nm FinFET, help evaluate and deploy the circuit. The simulation data demonstrates higher linearity, decreased voltage and current errors, and minimal static power usage at 184.95 nW. Under 18nm FinFET technology, the circuit operates with a 10nA bias current and 0.28 V supply voltage.