A polarization insensitive erbium-doped waveguide amplifier
We demonstrated a polarization-insensitive erbium doped silicon nitride amplifier based on a polarization equalizer. Off-chip net gain of 12 dB and < 0 . 5 dB polarization dependence is achieved with a -8.3 dBm input signal power at 1550 nm.
Authors
- Xinru Ji (ORCID: https://orcid.org/0000-0001-7057-7786)
- Zheru Qiu (ORCID: https://orcid.org/0000-0002-6465-026X)
- Tobias J. Kippenberg (ORCID: https://orcid.org/0000-0002-3408-886X)
- Yang Liu (ORCID: https://orcid.org/0000-0002-6872-6815)
- Grigory Lihachev
- Xuan Yang (ORCID: https://orcid.org/0000-0001-5458-8995)
Institutions
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.ss187_8
- Primary Topic
- Advanced Fiber Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00