High-saturation-current waveguide-coupled Ge-on-Si photodetector fabricated by a standard foundry process for RF applications
We demonstrate novel high-saturation-current waveguide-coupled vertical Ge-on-Si photodetectors, achieving a saturation current of 21.4 mA, a dark current of 30.1 nA at -3 V, and a 3 dB bandwidth of 15.2 GHz at -3 V.
Authors
- Makoto Okano (ORCID: https://orcid.org/0000-0002-5483-3425)
- Mitsuru Takenaka (ORCID: https://orcid.org/0000-0002-9852-1474)
- Rui Tang (ORCID: https://orcid.org/0000-0001-6443-4690)
- Kasidit Toprasertpong
- Shinichi Takagi
- Chao Zhang (ORCID: https://orcid.org/0009-0008-2674-344X)
Institutions
- Tokyo University of Information Sciences (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.ss181_3
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00