A combined dry-wet etching fabrication process for a Ge2Sb2Te5 metasurface to tune Mie lattice resonance
We propose a combined dry-wet etching fabrication for Ge2Sb2Te5 metasurfaces, where Al as the mask can achieve a high dry etching selectivity ratio (13.35:1). The fabricated metasurface tunes Mie lattice resonance response efficiently (over 50%).
Authors
- Liye Li (ORCID: https://orcid.org/0000-0002-1127-706X)
- Xinghong Chen (ORCID: https://orcid.org/0009-0009-1069-8004)
- Yifei Mao (ORCID: https://orcid.org/0000-0003-3508-2555)
- Wengang Wu
Institutions
- Shanghai Jiao Tong University (CN)
- Peking University (CN)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.ss138_3
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00