Scalable-manufactured erbium-doped silicon nitride amplifiers with high output power
We demonstrate a wafer-scale manufactured photonic integrated circuit-based erbium-doped silicon nitride amplifier achieving record-high output power as high as 180 mW (fiber-coupled) and 241 mW (on-chip) at 1560 nm wavelength.
Authors
- Xinru Ji (ORCID: https://orcid.org/0000-0001-7057-7786)
- Yang Liu (ORCID: https://orcid.org/0000-0002-0508-1474)
- Zheru Qiu (ORCID: https://orcid.org/0000-0002-6465-026X)
- Jianqi Hu (ORCID: https://orcid.org/0000-0002-2018-253X)
- Tobias J. Kippenberg (ORCID: https://orcid.org/0000-0002-3408-886X)
- Grigory Lihachev
- Xuan Yang (ORCID: https://orcid.org/0000-0001-5458-8995)
Institutions
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.ss166_2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00