Radiophotoluminescence properties of KCl-doped Zn₂SiO₄

Abstract KCl-doped Zn 2 SiO 4 was synthesized via the molten salt method, and its photoluminescence (PL) and radiophotoluminescence (RPL) properties were systematically investigated. X-ray diffraction analysis confirmed that the synthesized material was a single-phase Zn 2 SiO 4 . Although Mn was not intended to dope in Zn 2 SiO 4 , the PL spectra exhibited two broad emission bands centered at approximately 520 nm and 740 nm, which were attributed to the 4 T₁– 6 A₁​transition of Mn 2+ ions and non-bridging oxygen hole centers, respectively. Upon exposure to ionizing radiation, the RPL intensity increased monotonically with the irradiation dose. Moreover, the RPL signal was enhanced through repeated measurements, indicating the stability of the luminescent centers. These results demonstrate that Zn 2 SiO 4 exhibits RPL behavior following ionizing radiation exposure, suggesting its potential applicability in radiation dosimetry.