Observation of Excitonic Doublet Structure, Biexcitons and Their Temperature Dependence in High-Quality β-InSe Single Crystals

We present a systematic study of the fundamental optical properties of indium selenide (InSe) single crystals over a temperature range of 17 K to 300 K. The high structural quality of the β-polytype crystals was confirmed through X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy, demonstrating excellent crystallinity and a nearly stoichiometric In:Se ratio. The temperature-dependent absorption and photoluminescence (PL) spectra are characterized by a prominent free exciton (FX) resonance. At 17 K, the photoluminescence spectrum exhibits a distinct fine-structure splitting of the Wannier-Mott exciton, yielding a triplet state at 1.333 eV and a singlet state at 1.336 eV. Additionally, a biexciton (XX) is localized at an energy of 1.322 eV as confirmed by the nonlinear dependence of intensity on excitation power density. At low temperatures, the absorption spectrum exhibits the free exciton ground state (<i>n</i> = 1) at 1.338 eV together with the first excited state (<i>n</i> = 2) at 1.350 eV. We systematically tracked and analyzed the temperature evolution of these quasiparticle energies. These findings enhance our understanding of the intrinsic many-body interactions in high-quality InSe, providing essential parameters for advancing its applications in innovative optoelectronic and quantum light-emitting devices.

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Publication Details

Journal
Materials
Published
2025-09-23
DOI
https://doi.org/10.3390/ma18194451
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Observation of Excitonic Doublet Structure, Biexcitons and Their Temperature Dependence in High-Quality β-InSe Single Crystals

Nguyễn Thu Loan, Ung Thi Dieu Thuy, Thi Thuong Huyen Tran, Thi Huong Nguyen et al.
Materials
Chalcogenide Semiconductor Thin Films
article

Observation of Excitonic Doublet Structure, Biexcitons and Their Temperature Dependence in High-Quality β-InSe Single Crystals

Nguyễn Thu Loan, Ung Thi Dieu Thuy, Thi Thuong Huyen Tran, Thi Huong Nguyen, Tien–Thanh Nguyen, Long V. Le, Tae Jung Kim, Man Hoai Nam, Tran Thi Thu Huong
article en

Abstract

We present a systematic study of the fundamental optical properties of indium selenide (InSe) single crystals over a temperature range of 17 K to 300 K. The high structural quality of the β-polytype crystals was confirmed through X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy, demonstrating excellent crystallinity and a nearly stoichiometric In:Se ratio. The temperature-dependent absorption and photoluminescence (PL) spectra are characterized by a prominent free exciton (FX) resonance. At 17 K, the photoluminescence spectrum exhibits a distinct fine-structure splitting of the Wannier-Mott exciton, yielding a triplet state at 1.333 eV and a singlet state at 1.336 eV. Additionally, a biexciton (XX) is localized at an energy of 1.322 eV as confirmed by the nonlinear dependence of intensity on excitation power density. At low temperatures, the absorption spectrum exhibits the free exciton ground state (<i>n</i> = 1) at 1.338 eV together with the first excited state (<i>n</i> = 2) at 1.350 eV. We systematically tracked and analyzed the temperature evolution of these quasiparticle energies. These findings enhance our understanding of the intrinsic many-body interactions in high-quality InSe, providing essential parameters for advancing its applications in innovative optoelectronic and quantum light-emitting devices.

MaterialsVol. 18(19)
Nha Trang University (VN), Kyung Hee University (KR), Vietnam Academy of Science and Technology (VN)
Vietnam Academy of Science and Technology, National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 74%
Chalcogenide Semiconductor Thin Films
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