A Comprehensive Review of Phase Change Memory for Neuromorphic Computing: Advancements, Challenges, and Future Directions

ABSTRACT The human brain functions as a highly efficient control center, inspiring the field of neuromorphic computing, which seeks to replicate its structure and behavior through hardware systems. Neuromorphic computing integrates processing and memory functions using artificial neurons and synapses designed with electronic circuits, enabling parallel, energy‐efficient data handling. One of the leading technologies supporting this paradigm is phase change memory (PCM), a non‐volatile memory that stores data through reversible transitions between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide materials, particularly Ge 2 Sb 2 Te 5 (GST225). PCM exhibits fast read/write speeds, excellent data retention, and scalability, making it ideal for neuromorphic architectures. This review highlights recent advancements in PCM for neuromorphic computing, including innovations in doping strategies and device engineering. Notable developments include arsenic‐doped ovonic threshold switches (OTS) for enhanced selector performance, monolayer Sb 2 Te 3 for atomic‐scale devices, and heater‐all‐around (HAA) 3D architectures for reduced energy consumption. Integration with machine learning tools enables precise atomistic modeling, accelerating material and device optimization. Furthermore, emerging variants like ovonic unified memory (OUM) and interfacial PCM (IPCM) offer unique performance advantages. While PCM promises significant benefits, key challenges such as resistance drift, endurance limits, and thermal crosstalk must be addressed. The global neuromorphic computing market is poised for exponential growth, driven by innovations in materials, algorithms, and architectures. The PCM and neuromorphic computing represent a transformative leap toward intelligent, adaptive, and energy‐efficient computing systems.