Temperature-Dependent Transport of Photoinduced Charge Carriers Across a Single-Walled Carbon Nanotube Film/Si Interface

This study investigates the effect of temperature on the performance of the single-walled carbon nanotube (SWCNT) film/Si photodetector. Specifically, the photocurrent across a SWCNT/Si heterojunction when illuminated with light of 632.8 nm wavelength of different powers was studied in detail in a wide temperature range, from 20 to 300 K. The objective was to determine the parameters of the heterojunction, which is inherently inhomogeneous, and to identify the main ones that determine the optoelectronic figures of merit of a photodetector based on it. The barrier height and its temperature dependence were determined within the framework of the theory of thermionic emission, taking into account the non-uniform distribution of the barrier height over the heterojunction area. The parameters of the heterojunction and SWCNT/Si interface and their temperature dependences were calculated based on the known temperature dependences of the concentration of charge carriers and ionized impurities in Si using the Poisson equation based on Fermi-Dirac statistics. The obtained results indicate the importance of interplay between the effects of reducing the barrier height and the processes of decreasing the separation efficiency of nonequilibrium charge carriers and increasing the rate of their recombination.