Spintronics and magnetic memory devices
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM). Owing to its superior properties of size, speed, and endurance, MRAM is promising for applications in internet-of-things, automotive microcontrollers, and data centers. Here, we review key spintronic technologies of magnetoresistance and spin-transfer torque, which are the operating mechanism for MRAM, and properties and status of MRAM commercialization. We also review recent achievements and future challenges in emerging topics of spin-orbit torque, voltage gating, orbitronics, and antiferromagnetic spintronics, and new applications of spin-torque oscillators, probabilistic computing, and skyrmion-based applications.
Authors
- Byong‐Guk Park (ORCID: https://orcid.org/0000-0001-8813-7025)
- Taeyoung Lee (ORCID: https://orcid.org/0000-0003-4982-4150)
- Sunjae Chung (ORCID: https://orcid.org/0000-0002-9970-0060)
- OukJae Lee (ORCID: https://orcid.org/0000-0001-9135-8347)
- Seungmo Yang (ORCID: https://orcid.org/0000-0001-6501-3812)
- Gyung‐Min Choi (ORCID: https://orcid.org/0000-0002-2501-042X)
- Woojin Kim (ORCID: https://orcid.org/0000-0002-2755-6661)
Institutions
- Korea National University of Education (KR)
- Korea Advanced Institute of Science and Technology (KR)
- Samsung (South Korea) (KR)
- Korea Research Institute of Standards and Science (KR)
- Kootenay Association for Science & Technology (CA)
- Korea Institute of Science and Technology (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Advances in Physics X
- Published
- 2025-09-23
- DOI
- https://doi.org/10.1080/23746149.2025.2557918
- Citations
- 2
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 2.49