Ce3+:CaHfO3 thick film scintillators epitaxially grown on SrTiO3, YAlO3, and MgO substrates using chemical vapor deposition

Alkaline earth hafnate perovskite is a promising inorganic scintillator due to its high density and high stopping power; however, its high melting point and phase transitions at elevated temperatures make its crystal growth difficult. We apply chemical vapor deposition method to prepare Ce 3+ -doped CaHfO 3 (Ce 3+ :CaHfO 3 ) thick films on the SrTiO 3 , YAlO 3 , and MgO substrates. Ce 3+ :CaHfO 3 thick films were epitaxially grown on each substrate with deposition rates of 44–77 μm h −1 . The luminescence spectra of the films at the excitation wavelength of 340 nm showed peaks at 423 nm and 463 nm, which were attributed to the Ce 3+ 5d → 2 F 5/2 and 5d → 2 F 7/2 transitions, respectively. The scintillation light yield of the Ce 3+ :CaHfO 3 thick film grown on the MgO substrate was 2900 photons per 5.5 MeV with fast decay constant of 32.1 ns. • Ce 3+ :CaHfO 3 thick film scintillator was epitaxially grown using CVD method • Ce 3+ :CaHfO 3 exhibited luminescence at 423 and 463 nm due to Ce 3+ 5d-4f transitions • Scintillation Light yield was 2900 photons per 5.5 MeV

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Journal
Journal of Luminescence
Published
2025-09-23
DOI
https://doi.org/10.1016/j.jlumin.2025.121568
Primary Topic
Radiation Detection and Scintillator Technologies
Type
article
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article

Ce3+:CaHfO3 thick film scintillators epitaxially grown on SrTiO3, YAlO3, and MgO substrates using chemical vapor deposition

Tomoaki Oga, Shunsuke Kurosawa, Akihiko Ito
Journal of Luminescence
Radiation Detection and Scintillator Technologies
article

Ce3+:CaHfO3 thick film scintillators epitaxially grown on SrTiO3, YAlO3, and MgO substrates using chemical vapor deposition

Tomoaki Oga, Shunsuke Kurosawa, Akihiko Ito
article en

Abstract

Alkaline earth hafnate perovskite is a promising inorganic scintillator due to its high density and high stopping power; however, its high melting point and phase transitions at elevated temperatures make its crystal growth difficult. We apply chemical vapor deposition method to prepare Ce 3+ -doped CaHfO 3 (Ce 3+ :CaHfO 3 ) thick films on the SrTiO 3 , YAlO 3 , and MgO substrates. Ce 3+ :CaHfO 3 thick films were epitaxially grown on each substrate with deposition rates of 44–77 μm h −1 . The luminescence spectra of the films at the excitation wavelength of 340 nm showed peaks at 423 nm and 463 nm, which were attributed to the Ce 3+ 5d → 2 F 5/2 and 5d → 2 F 7/2 transitions, respectively. The scintillation light yield of the Ce 3+ :CaHfO 3 thick film grown on the MgO substrate was 2900 photons per 5.5 MeV with fast decay constant of 32.1 ns. • Ce 3+ :CaHfO 3 thick film scintillator was epitaxially grown using CVD method • Ce 3+ :CaHfO 3 exhibited luminescence at 423 and 463 nm due to Ce 3+ 5d-4f transitions • Scintillation Light yield was 2900 photons per 5.5 MeV

Journal of LuminescenceVol. 288
Yokohama National University (JP), Tohoku University (JP), Institute for Laser Technology (JP), The University of Osaka (JP)
Openalex Percentile: Top 67%
Radiation Detection and Scintillator Technologies
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Ce3+:CaHfO3 thick film scintillators epitaxially grown on SrTiO3, YAlO3, and MgO substrates using chemical vapor deposition — Tomoaki Oga, Shunsuke Kurosawa, et al. · Journal of Luminescence (2025) | TGRS Research Map | TGRS