Numerical Analysis on the Effect of Purcell Factor in GaN Nano Wire Lasers

GaN lasers have gained attention due to their ability to radiate in the ultraviolet region of the electromagnetic spectrum. Generating short optical pulses by gain switching and manipulating the emission characteristics of Nanolasers. This work reports the impact of Purcell factor (F), on the dc and transient characteristics of the nano laser, by solving the rate equations. Increased Purcell factor leads to reduced threshold and increased slope, which is evident from the steady state characteristics. However, under gain switching condition, lower value of F leads to better pulse features. For the device considered in this study, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{F}=1$</tex>, provides a shorter pulse, FWHM of 3 pS with 8.5 mW peak power, under 6 mA electrical pulse excitation.