Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

As a building block for a silicon-based quantum processor architecture we fabricated single-electron shuttling channels within an industrial 200mm production line. Shuttling is achieved via a moving quantum dot, which is formed by a series of voltage signals, applied to a dense grid of gate electrodes on top of a Si/SiGe heterostructure. The gate module comprises a triple metal gate process, where one gate layer uses variable-shaped electron beam lithography (VSB) in order to achieve 80nm pitch of the complex grid architecture. It is shown that VSB is a suitable tool for low-volume industrial fabrication of complex quantum processors based on 2D-shuttling arrays. These devices were electrically characterised at cryo temperatures and excellent shuttling fidelity is presented.

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Published
2025-09-23
DOI
https://doi.org/10.1117/12.3063352
Primary Topic
Advancements in Photolithography Techniques
Type
article
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article

Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

Michael Friedrich, Hendrik Bluhm, Till Huckemann, Felix Reichmann et al.
Advancements in Photolithography Techniques
article

Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

Michael Friedrich, Hendrik Bluhm, Till Huckemann, Felix Reichmann, Varvara Brackmann, Marcus Wislicenus, Lars R. Schreiber, Dominique Bougeard, Pascal Muster, Nikola David Komericki, W. Langheinrich, Sebastian Pregl
article en

Abstract

As a building block for a silicon-based quantum processor architecture we fabricated single-electron shuttling channels within an industrial 200mm production line. Shuttling is achieved via a moving quantum dot, which is formed by a series of voltage signals, applied to a dense grid of gate electrodes on top of a Si/SiGe heterostructure. The gate module comprises a triple metal gate process, where one gate layer uses variable-shaped electron beam lithography (VSB) in order to achieve 80nm pitch of the complex grid architecture. It is shown that VSB is a suitable tool for low-volume industrial fabrication of complex quantum processors based on 2D-shuttling arrays. These devices were electrically characterised at cryo temperatures and excellent shuttling fidelity is presented.

Infineon Technologies (Germany) (DE), Forschungszentrum Jülich (DE), Fraunhofer Institute for Applied Solid State Physics (DE), Fraunhofer Institute for Photonic Microsystems (DE), Jülich Aachen Research Alliance (DE), Arioso Systems (Germany) (DE), University of Regensburg (DE), Leibniz Institute for High Performance Microelectronics (DE)
Openalex Percentile: Top 75%
Advancements in Photolithography Techniques
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