Modeling of two-photon lithography including oxygen diffusion using a generalized compact model

Two-photon lithography (TPL) has received significant attention for its ability to induce localized polymerization with spatial resolution below 100 nm. Beyond conventional 2D and 2.5D lithography, TPL utilizes a focused laser to initiate two-photon polymerization (TPP), enabling the fabrication of full 3D structures. Despite its potential, TPL’s application is currently hindered by limited throughput, highlighting the need for advanced simulation models to explore technical options for improvement and optimization. One of the primary challenges in accurately modeling the TPL process lies in accounting for the complex interplay of photochemical reactions and oxygen diffusion. Detailed simulation approaches often require extensive computational resources, limiting their practicality. In this work, we propose a generalized compact model that balances chemical and physical fidelity with computational efficiency. This model integrates essential chemical and physical parameters and incorporates diffusion-reaction dynamics through a simplified yet accurate framework. To ensure practical applicability, we propose a straightforward way to calibrate a derived formula that minimizes the computational cost while enabling simulation across varying exposure times. Through calibration of parameters using experimental data, the model demonstrates enhanced predictive accuracy.