High‐Efficiency InGaAsP Photovoltaic Devices for Optical Wireless Power Transmission in the 1.06 μm Range
Herein, InGaAsP photovoltaic devices are fabricated for 1.06 μm band optical wireless power transmission. The fabrication process incorporates multi‐junctions through the introduction of tunnel junctions, an increase in the thickness of the surface electrode, and an outer circular electrode. The epitaxial layers are grown via the metal–organic vapor‐phase epitaxy method. Multi‐junctions are realized via the utilization of Type II tunnel junctions. Results show that an increase in the thickness of the photoresist results in the fabrication of a thicker electrode. The implementation of an outer circular electrode results in a maximum power conversion efficiency that exceeds 44% at a laser irradiation intensity of 1.5 W cm −2 .
Authors
- Yukiko Suzuki
- Takeru Yamada (ORCID: https://orcid.org/0000-0003-3103-7300)
- Meita Asami (ORCID: https://orcid.org/0000-0002-6421-1777)
- Kensuke Nishioka (ORCID: https://orcid.org/0000-0002-8704-3171)
- Shiro Uchida (ORCID: https://orcid.org/0000-0001-7555-9114)
- Masaharu Takahashi (ORCID: https://orcid.org/0000-0002-4725-3190)
- Kouichi Tabata
- Sho Aonuki (ORCID: https://orcid.org/0000-0002-9155-9170)
- Yohei Toriumi (ORCID: https://orcid.org/0000-0003-4130-8792)
- Natsuha Ochiai (ORCID: https://orcid.org/0000-0002-0672-5614)
- Kouichi Akahane (ORCID: https://orcid.org/0000-0002-8919-1717)
- Kazuto Kashiwakura
- Reo Aoyama
- Masakazu Arai
- Jun‐ichi Suzuki
- Yusuke Motomura (ORCID: https://orcid.org/0009-0000-4259-2866)
- Takaya Oshimo
Institutions
- University of Miyazaki (JP)
- NTT (Japan) (JP)
- Chiba Institute of Technology (JP)
- National Institute of Information and Communications Technology (JP)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2025-09-21
- DOI
- https://doi.org/10.1002/pssa.202500585
- Citations
- 1
- Primary Topic
- solar cell performance optimization
- Type
- article
- Field-Weighted Citation Impact
- 0.73