High-performance amorphous superconducting rhenium films by e-beam evaporation

We present electron beam evaporation of rhenium films on room-temperature substrates. The films are shown to be amorphous and achieve a record-high critical temperature for rhenium—exceeding 7 K at the midpoint of the transition—alongside a high critical current density of 5000 A/mm2 and critical fields above 10 T. Terahertz spectroscopy reveals a Bardeen–Cooper–Schrieffer-like character of superconductivity with a zero-temperature energy gap of approximately 2 meV and subgap optical conductivity. Despite being friable, the films are stable and compatible with lift-off processes that opens the capabilities for superconducting device applications.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-09-22
DOI
https://doi.org/10.1063/5.0292196
Citations
2
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

High-performance amorphous superconducting rhenium films by e-beam evaporation

A. R. Prishchepa, E. S. Zhukova, A. Yu. Kuntsevich, A.N. Terentiev et al.
2 citations
Journal of Applied Physics
Thin-Film Transistor Technologies
1.46
article

High-performance amorphous superconducting rhenium films by e-beam evaporation

A. R. Prishchepa, E. S. Zhukova, A. Yu. Kuntsevich, A.N. Terentiev, E. V. Tarkaeva, V. A. Ievleva
article en
2 citations

Abstract

We present electron beam evaporation of rhenium films on room-temperature substrates. The films are shown to be amorphous and achieve a record-high critical temperature for rhenium—exceeding 7 K at the midpoint of the transition—alongside a high critical current density of 5000 A/mm2 and critical fields above 10 T. Terahertz spectroscopy reveals a Bardeen–Cooper–Schrieffer-like character of superconductivity with a zero-temperature energy gap of approximately 2 meV and subgap optical conductivity. Despite being friable, the films are stable and compatible with lift-off processes that opens the capabilities for superconducting device applications.

Journal of Applied PhysicsVol. 138(12)
National Research University Higher School of Economics (RU), P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU), Moscow Institute of Physics and Technology (RU)
Russian Science Foundation
Openalex Percentile: Top 15%
Thin-Film Transistor Technologies
1.46
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