Amplification-free 240 Gbps optical interconnection with TFLN transmitter and Ge-PD receiver
The exponential growth of data traffic in modern data centers has driven the demand for ultra-high-bandwidth, low-power optical interconnects. While 200 Gbps per wavelength has become standardized, next-generation systems aim to exceed this benchmark without relying on power-hungry digital signal processors (DSPs). Leveraging the CMOS compatibility and scalability of germanium photodetectors (Ge-PDs) over traditional III-V-based counterparts, we report, for the first time, to the best of our knowledge, a 240-Gbps O-band optical interconnect over 2 km of standard fiber without any DSP and amplification in both optical and electrical domains. This demonstration employs a >70 GHz thin-film lithium niobate (TFLN) modulator and a 91 GHz Ge PD, establishing a viable path toward compact, energy-efficient, and high-speed heterogeneous integration for future optical transceivers.
Authors
- Jinwen Song (ORCID: https://orcid.org/0000-0002-2454-9212)
- Fangchen Hu (ORCID: https://orcid.org/0000-0003-3859-1558)
- Xiaohua Hu (ORCID: https://orcid.org/0000-0002-7735-5091)
- Xuanhao Wang
- Wei Chu (ORCID: https://orcid.org/0000-0002-8464-2451)
- Aoxue Wang (ORCID: https://orcid.org/0009-0005-3310-0678)
- Zhipei Wang
- Shuai Yuan (ORCID: https://orcid.org/0000-0001-8676-2644)
- Xu Wang (ORCID: https://orcid.org/0000-0002-5193-9697)
- Haiwen Cai (ORCID: https://orcid.org/0000-0002-7033-6349)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-09-22
- DOI
- https://doi.org/10.1364/ol.575339
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00