A Mini-Review on Mitigating Degradation of Metallic Interconnects in Solid Oxide Cell Stack Systems: Advances, Challenges, and Solutions

Metallic interconnects (MICs) are critical components in solid oxide cell (SOC) stack systems, facilitating efficient power generation and fuel production. Despite their cost-effectiveness, high conductivity, and manufacturability advantages over ceramic alternatives, MICs face significant degradation challenges during high-temperature operations. Key issues encompass dual-atmosphere exposure, element interdiffusion, chromium volatilization, and subsequent electrode poisoning, which collectively deteriorate the performance of SOC stack systems. This review comprehensively consolidates recent advancements in mitigating these detrimental impacts through two primary strategies: surface modification via protective coatings (e.g., perovskite, spinel, reactive elements, and composite coatings) and composition modulation via element doping (e.g., alloying with Ti, Nb, Mo, W, or Mn). The efficacy of protective coatings in suppressing Cr evaporation and reducing area-specific resistance is critically assessed, alongside novel alloy designs that enhance oxidation resistance and thermal stability. Furthermore, deposition technologies, such as screen printing, physical vapor deposition, electrophoretic deposition, and thermal spraying, are evaluated with respect to their performance and scalability. The synthesized insights provide feasible pathways for the optimization of MIC durability and SOC stack efficiency, ultimately supporting the commercialization of SOC technology for sustainable energy applications.

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Publication Details

Journal
Energy & Fuels
Published
2025-09-22
DOI
https://doi.org/10.1021/acs.energyfuels.5c03611
Citations
5
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
3.65
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article

A Mini-Review on Mitigating Degradation of Metallic Interconnects in Solid Oxide Cell Stack Systems: Advances, Challenges, and Solutions

Hongwei Cao, Yingying Hao, Zuoqing Liu, Guangming Yang et al.
5 citations
Energy & Fuels
Semiconductor materials and devices
3.65
article

A Mini-Review on Mitigating Degradation of Metallic Interconnects in Solid Oxide Cell Stack Systems: Advances, Challenges, and Solutions

Hongwei Cao, Yingying Hao, Zuoqing Liu, Guangming Yang, Rui Zhu, Ran Ran
article en
5 citations

Abstract

Metallic interconnects (MICs) are critical components in solid oxide cell (SOC) stack systems, facilitating efficient power generation and fuel production. Despite their cost-effectiveness, high conductivity, and manufacturability advantages over ceramic alternatives, MICs face significant degradation challenges during high-temperature operations. Key issues encompass dual-atmosphere exposure, element interdiffusion, chromium volatilization, and subsequent electrode poisoning, which collectively deteriorate the performance of SOC stack systems. This review comprehensively consolidates recent advancements in mitigating these detrimental impacts through two primary strategies: surface modification via protective coatings (e.g., perovskite, spinel, reactive elements, and composite coatings) and composition modulation via element doping (e.g., alloying with Ti, Nb, Mo, W, or Mn). The efficacy of protective coatings in suppressing Cr evaporation and reducing area-specific resistance is critically assessed, alongside novel alloy designs that enhance oxidation resistance and thermal stability. Furthermore, deposition technologies, such as screen printing, physical vapor deposition, electrophoretic deposition, and thermal spraying, are evaluated with respect to their performance and scalability. The synthesized insights provide feasible pathways for the optimization of MIC durability and SOC stack efficiency, ultimately supporting the commercialization of SOC technology for sustainable energy applications.

Energy & FuelsVol. 39(39)
Nanjing Tech University (CN), State Key Laboratory of Materials-Oriented Chemical Engineering
Openalex Percentile: Top 7%
Semiconductor materials and devices
3.65
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