Interfacial electronic structure modulation by facet orientation and sulfur vacancies in CdS/MoS <sub>2</sub> heterojunctions

Select sulfur vacancy configurations in CdS/MoS 2 heterojunctions introduce midgap states which enhance the HER, while CdS facet termination controls interfacial charge transfer and affects overall band alignment.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc02423d
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19

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article

Interfacial electronic structure modulation by facet orientation and sulfur vacancies in CdS/MoS 2 heterojunctions

Roozbeh Anvari, Wennie Wang, Beniam Kumela
3 citations
Journal of Materials Chemistry C
Chalcogenide Semiconductor Thin Films
2.19
article

Interfacial electronic structure modulation by facet orientation and sulfur vacancies in CdS/MoS 2 heterojunctions

Roozbeh Anvari, Wennie Wang, Beniam Kumela
article en
3 citations

Abstract

Select sulfur vacancy configurations in CdS/MoS 2 heterojunctions introduce midgap states which enhance the HER, while CdS facet termination controls interfacial charge transfer and affects overall band alignment.

Journal of Materials Chemistry CVol. 13(44)
The University of Texas at Austin (US)
Welch Foundation, University of Texas at Austin, Department of Mechanical Engineering, University of Texas at Austin
Openalex Percentile: Top 11%
Chalcogenide Semiconductor Thin Films
2.19
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