Recent Advancements in N-polar GaN HEMT Technology
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability. In this paper, the authors present a comprehensive review of the evolution of N-polar GaN HEMT technology from the perspective of crystal growth, dielectrics, and metals on N-polar GaN, transistor design, and performance. Specifically, the authors discuss the progress of the N-polar GaN HEMTs toward high-frequency, high-power, and high-efficiency applications with recent record-level performances, demonstrated by the authors, at mmWave frequencies.
Authors
- S. Keller (ORCID: https://orcid.org/0000-0002-6529-3516)
- Christopher Clymore (ORCID: https://orcid.org/0000-0001-8757-8099)
- Boyu Wang (ORCID: https://orcid.org/0000-0001-6115-6859)
- Umesh K. Mishra (ORCID: https://orcid.org/0000-0001-8084-9247)
- Oğuz Odabaşı (ORCID: https://orcid.org/0000-0002-2002-1488)
- Matthew Guidry (ORCID: https://orcid.org/0000-0002-5344-9157)
- Emre Akso (ORCID: https://orcid.org/0000-0001-9650-6871)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Kamruzzaman Khan (ORCID: https://orcid.org/0000-0002-4531-288X)
- Tanmay Chavan (ORCID: https://orcid.org/0000-0002-2044-3170)
- Henry Collins (ORCID: https://orcid.org/0000-0001-9918-5700)
- Robert Hamwey (ORCID: https://orcid.org/0009-0006-8306-8730)
- Elaheh Ahmadi (ORCID: https://orcid.org/0000-0002-8330-9366)
- Weiyi Li (ORCID: https://orcid.org/0000-0002-9760-7321)
Institutions
- University of California, Santa Barbara (US)
- University of California, Los Angeles (US)
Publication Details
- Journal
- Crystals
- Published
- 2025-09-22
- DOI
- https://doi.org/10.3390/cryst15090830
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Defense Advanced Research Projects Agency
- Office of Naval Research