High-Density GaN-Based Laser Driver Power Supply
As a wide bandgap semiconductor material, gallium nitride (GaN) has shown significant advantages in high-temperature, high-power, and high-frequency applications due to its excellent physical properties and performance parameters. In this paper, a constant-current laser driver with high input, high output voltage, high frequency and high power density based on GaN MOSFET is designed, and the soft switching of GaN MOSFET is realized by turning off and turning on at the peak and zero crossing points of the inductor current, respectively. Finally, a prototype was developed to further verify the control technology, and the simulation and prototype results showed the feasibility and high conversion efficiency of the control method.
Authors
- Weitong Miao
- Jun Huang (ORCID: https://orcid.org/0000-0003-4598-4747)
- Shuai Ding (ORCID: https://orcid.org/0009-0008-5603-0053)
- Haitao Chen
- Yifan Wang (ORCID: https://orcid.org/0000-0002-3287-9780)
Institutions
- Shanghai University of Electric Power (CN)
Publication Details
- Published
- 2025-06-20
- DOI
- https://doi.org/10.1109/eee64897.2025.11162809
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00