A CNTFET-Based 10T Static Memory Design Immune to Read and Half-Select Disturbs for Low-Power Wearable Biomedical Systems

This paper introduces a novel 10T SRAM cell optimized for low-power, high-reliability biomedical wearable systems. The proposed design features a read-assist mechanism to suppress read disturbs, enhancing read static noise margin (RSNM), while a decoupled pull-down path for the ‘0’ storage node improves write SNM (WSNM). Leveraging Stanford CNTFET models, HSPICE simulations reveal a 1.12× and 14.02× enhancement in RSNM and WSNM, respectively, at 0.3V over the conventional 6T cell. Additionally, the design achieves substantial power savings—3.02× (read), 1.97× (write), and 1.89× (leakage)—compared to state-of-the-art 9T/10T CNTFET SRAMs. Monte Carlo analysis further demonstrates superior robustness, with 2.38× and 6.62× higher yield in RSNM and WSNM at 0.3V, validating its reliability for energy-constrained biomedical applications.