Configurable Writing of Ferroelectric Nanostructure for the Nonvolatile Memory and Encryption
Traditional nonvolatile memory technology’s reliance on single-dimension encryption poses significant security vulnerabilities. Herein, we demonstrate a template-free electron beam lithography (EBL) technique for ferroelectric nanostructures with dose
Authors
- Yijing Nie (ORCID: https://orcid.org/0000-0002-6013-9472)
- Xin Chen (ORCID: https://orcid.org/0000-0001-6256-271X)
- Xuefeng Zhang (ORCID: https://orcid.org/0000-0003-4110-8096)
- Jian Zhang (ORCID: https://orcid.org/0000-0001-7181-6021)
- Lei Zhang (ORCID: https://orcid.org/0000-0002-9206-9843)
- Yingxin Chen (ORCID: https://orcid.org/0000-0002-9519-9731)
- Huigui Fang
- Yongshuang Li
Institutions
- Jiangsu University (CN)
- Shanghai Jiao Tong University (CN)
- Hangzhou Dianzi University (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Published
- 2025-09-22
- DOI
- https://doi.org/10.22541/au.175851374.49487619/v1
- Primary Topic
- Advanced Sensor and Energy Harvesting Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00