Mesh-shaped electrode thickness dependence of 1.06 μm range InGaAsP photovoltaic characteristics under high-intensity laser irradiation
Abstract We investigated the electrode thickness dependence of InGaAsP photovoltaic devices for 1.06 μm range optical wireless power transmission. Epitaxial layers were grown using metal-organic vapor-phase epitaxy. Thick-front electrodes were formed using electrolytic plating and the liftoff technique. We investigated the current–voltage characteristics under 1064 nm laser irradiation and confirmed that the thick electrode is effective in decreasing the series resistance and improving the fill factor, especially under high-intensity laser irradiation. The maximum power conversion efficiency exceeded 35% at 3.3 W cm −2 laser power density.
Authors
- Yukiko Suzuki
- Y. Toriumi
- Takeru Yamada (ORCID: https://orcid.org/0000-0003-3103-7300)
- Meita Asami (ORCID: https://orcid.org/0000-0002-6421-1777)
- Kensuke Nishioka (ORCID: https://orcid.org/0000-0002-8704-3171)
- Shiro Uchida (ORCID: https://orcid.org/0000-0001-7555-9114)
- Masaharu Takahashi (ORCID: https://orcid.org/0000-0002-4725-3190)
- Kouichi Tabata
- Sho Aonuki (ORCID: https://orcid.org/0000-0002-9155-9170)
- Natsuha Ochiai (ORCID: https://orcid.org/0000-0002-0672-5614)
- Kouichi Akahane (ORCID: https://orcid.org/0000-0002-8919-1717)
- Kazuto Kashiwakura
- Reo Aoyama
- Masakazu Arai
- Jun‐ichi Suzuki
- Yusuke Motomura (ORCID: https://orcid.org/0009-0000-4259-2866)
- Takaya Oshimo
Institutions
- University of Miyazaki (JP)
- NTT (Japan) (JP)
- Chiba Institute of Technology (JP)
- National Institute of Information and Communications Technology (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-09-22
- DOI
- https://doi.org/10.35848/1347-4065/ae09e3
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25