Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes
Abstract The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p-layer adjacent to the active region based on H-atom behavior from SIMS profile, reducing the Mg concentration to values <1 × 1017 cm-3 increased considerably the device’s lifetime. The obtained long-lifetime of the UVC-LED exhibited an output power of 158 mW at 350 mA.
Authors
- Tetsuya Takeuchi (ORCID: https://orcid.org/0000-0002-2378-2610)
- Shinya Boyama
- Shigefusa F. Chichibu (ORCID: https://orcid.org/0000-0001-9558-1642)
- Kohei K. Shima (ORCID: https://orcid.org/0000-0003-0967-141X)
- Yoshiki Saito (ORCID: https://orcid.org/0000-0003-3212-6356)
- Hisanori Ishiguro (ORCID: https://orcid.org/0009-0008-4192-7626)
- Koji Okuno (ORCID: https://orcid.org/0000-0002-7811-5065)
- Atsushi Miyazaki
Institutions
- Tohoku University (JP)
- Toyoda Gosei (Japan) (JP)
- Meijo University (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-09-22
- DOI
- https://doi.org/10.35848/1882-0786/ae09ee
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00