MXene‐Integrated III‐Nitride Semiconductors: Recent Progress and Perspectives

Abstract III‐nitride semiconductors, including GaN, InN, and AlN, are widely recognized for their tunable direct bandgaps, high electron mobility, thermal and chemical stability, and large breakdown voltages, properties that enable a broad range of electronic and optoelectronic applications. However, the performance of III‐nitride‐based devices is limited by challenges in lattice matching, defect formation, and suboptimal contact interfaces. Recently, two‐dimensional MXenes have emerged as promising materials to overcome these limitations due to their exceptional metallic conductivity, tunable work function, solution processability, and ability to form clean van der Waals interfaces. This review highlights recent advances in integrating MXenes with III‐nitrides to improve device functionalities. Their roles as transparent electrodes, growth templates for nanostructures, and interfacial layers that suppress defect states and enhance charge transport, are discussed. Furthermore, the fundamental mechanisms underlying MXene/III‐nitride heterostructures are analyzed, their applications across photodetectors, light‐emitting diodes, power electronics, gas sensors, and photoelectrochemical water splitting are explored, and key challenges hindering commercial adoption are identified. Finally, future research directions are proposed to harness the full potential of MXene‐III‐nitride hybrid systems.