Growth and characterization of InSe semiconductor crystals via zone-melting directional solidification method

Publication Details

Journal
Scientia Sinica Technologica
Published
2025-09-22
DOI
https://doi.org/10.1360/sst-2025-0193
Primary Topic
Solid-state spectroscopy and crystallography
Type
article
Field-Weighted Citation Impact
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article

Growth and characterization of InSe semiconductor crystals via zone-melting directional solidification method

Scientia Sinica Technologica
Solid-state spectroscopy and crystallography
article

Growth and characterization of InSe semiconductor crystals via zone-melting directional solidification method

article en

Abstract

No abstract available for this paper.
Scientia Sinica TechnologicaVol. 55(12)
Openalex Percentile: Top 80%
Solid-state spectroscopy and crystallography
DOIOpen Access PDFOpenAlex
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Growth and characterization of InSe semiconductor crystals via zone-melting directional solidification method · Scientia Sinica Technologica (2025) | TGRS Research Map | TGRS