Quantum Interference Effects in the Single Crystal of Topological Insulator BiSbSe ₃

Single crystal of BiSbSe 3 is synthesized in order to explore its topological characteristics and magneto‐transport behavior. The material system, known for its narrow bandgap and sensitivity to defect‐induced conduction, makes it an ideal platform to investigate the interplay between surface and bulk transport channels. Structural, optical, and magneto‐transport studies are carried out to understand the underlying mechanisms governing low‐temperature conduction. The transport data exhibit the low‐temperature upturn arising from the variable range hopping and weak antilocalization (WAL) effect as analyzed through the 2D Hikami–Larkin–Nagaoka (HLN) model. The observed WAL effect is attributed to a 2D multichannel quantum coherent transport mechanism, where the electron–electron interactions govern the phase coherence. These findings position BiSbSe 3 as a promising candidate for next‐generation spintronics and low‐dimensional quantum device applications.