Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance
SnTe has attracted significant research interest as a lead-free alternative to PbTe; however, its intrinsically high hole concentration results in an undesirably low Seebeck coefficient and elevated electronic thermal conductivity, thus significantly limiting its thermoelectric (TE) performance. Herein, we present a cost-effective, binary thiol-amine-mediated colloidal synthesis method to synthesize Bi-doped SnTe nanoparticles, eliminating the use of tri-n-octylphosphine-based precursors. The introduction of an electron-rich Bi dopant reduces the hole concentration and increases the Seebeck coefficient. Furthermore, post-synthetic surface treatment with chalcogenidocadmate complexes promotes atomic interdiffusion during annealing and consolidation, leading to compositional redistribution and modulation of the electronic band structure. Density functional theory (DFT) calculations reveal that co-modification <i>via</i> Bi doping and CdSe-derived chalcogen incorporation reduces the energy offset at the valence band maxima from 0.30 eV to 0.10 eV, thereby enhancing valence band degeneracy. The synergistic structural and electronic band structure modulations produce an SnTe-based material with a record high power factor of 2.1 mW m<sup>-1</sup> K<sup>-2</sup> at 900 K, a maximum TE figure of merit (<i>zT</i>) of 1.2, and a promising theoretical conversion efficiency of 8.3%. This study reports a versatile and scalable colloidal synthesis strategy that integrates hierarchical structural modulation with electronic band engineering, offering a synergistic route to significantly enhance the TE performance.
Authors
- Marisol Martín‐González (ORCID: https://orcid.org/0000-0002-5687-3674)
- Shaoqing Lu
- Siqi Huo (ORCID: https://orcid.org/0000-0002-6454-5208)
- Lixiang Xu
- Miguel Á. Bañares (ORCID: https://orcid.org/0000-0003-3875-4468)
- Mingquan Li (ORCID: https://orcid.org/0009-0009-6139-6954)
- Andreu Cabot (ORCID: https://orcid.org/0000-0002-7533-3251)
- Weite Meng
- Yu Liu (ORCID: https://orcid.org/0000-0001-7313-6740)
- Khak Ho Lim (ORCID: https://orcid.org/0000-0003-3116-8589)
- Min Hong (ORCID: https://orcid.org/0000-0002-6469-9194)
- Wenjun Wang (ORCID: https://orcid.org/0000-0002-9740-2924)
- Mengyao Li (ORCID: https://orcid.org/0000-0002-9082-7938)
- Yu Zhang (ORCID: https://orcid.org/0000-0002-0332-0013)
- María Ibáñez (ORCID: https://orcid.org/0000-0001-5013-2843)
- Qingyue Wang (ORCID: https://orcid.org/0000-0003-1655-9290)
Institutions
- Institució Catalana de Recerca i Estudis Avançats (ES)
- Wenzhou University (CN)
- Institute of Science and Technology Austria (AT)
- Hefei University of Technology (CN)
- University of Southern Queensland (AU)
- Zhengzhou University (CN)
- Instituto de Catálisis y Petroleoquímica (ES)
- Institute of Micro and Nanotechnology (ES)
- Quzhou University (CN)
- Institut de Recerca en Energia de Catalunya (ES)
- State Key Laboratory of Chemical Engineering (CN)
- Universidad Autónoma de Madrid (ES)
- Zhejiang University (CN)
Publication Details
- Journal
- ACS Nano
- Published
- 2025-09-20
- DOI
- https://doi.org/10.1021/acsnano.5c12627
- Citations
- 1
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.52